GT1K2P15D5
Goford Semiconductor
IRF6662TRPBF
Part Number：
IRF6662TRPBF
Category：
Single FETs, MOSFETs
Manufacturer：
International Rectifier
Description：
IRF6662 - 12V-300V N-CHANNEL POW
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
- Operating Temperature -40°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 25 V
- Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
- Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 47A (Tc)
- Rds On (Max) @ Id, Vgs 22mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id 4.9V @ 100µA
- Supplier Device Package DIRECTFET™ MZ
- Package / Case DirectFET™ Isometric MZ
