GT1K2P15D5
Goford Semiconductor
IRF840HPBF
Part Number：
IRF840HPBF
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
POWER MOSFET TO220AB, 850 M @ 10
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 500 V
- Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
- Power Dissipation (Max) 125W (Tc)
- Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1059 pF @ 25 V
