GT1K2P15D5
Goford Semiconductor
IRFB4227PBFXKMA1
Part Number：
IRFB4227PBFXKMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
TRENCH >=100V
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 200 V
- Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Operating Temperature -40°C ~ 175°C (TJ)
- Power Dissipation (Max) 330W (Tc)
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
- Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
