GT1K2P15D5
Goford Semiconductor
IXFN100N10S1
Part Number：
IXFN100N10S1
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 100V 100A SOT-227B
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Chassis Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -40°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
- Vgs(th) (Max) @ Id 4V @ 4mA
- Power Dissipation (Max) 360W (Tc)
- Supplier Device Package SOT-227B
- Package / Case SOT-227-4, miniBLOC
- Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 15mOhm @ 500mA, 10V
