GT1K2P15D5
Goford Semiconductor
IXFT26N100XHV
Part Number：
IXFT26N100XHV
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 1000V 26A TO268HV
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 1000 V
- Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V
- Vgs (Max) ±30V
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Power Dissipation (Max) 860mW (Ta)
- Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
- Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C 26A (Ta)
- Supplier Device Package TO-268HV (IXFT)
- Vgs(th) (Max) @ Id 6V @ 4mA
