GT1K2P15D5
Goford Semiconductor
IXTP1N100
Part Number：
IXTP1N100
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 1000V 1.5A TO220AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
- Drain to Source Voltage (Vdss) 1000 V
- Power Dissipation (Max) 54W (Tc)
- Vgs (Max) ±30V
- Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
- Rds On (Max) @ Id, Vgs 11Ohm @ 1A, 10V
