GT1K2P15D5
Goford Semiconductor
IXTQ102N20T
Part Number：
IXTQ102N20T
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 200V 102A TO3P
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 200 V
- Package / Case TO-3P-3, SC-65-3
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Supplier Device Package TO-3P
- Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
- Power Dissipation (Max) 750W (Tc)
- Current - Continuous Drain (Id) @ 25°C 102A (Tc)
- Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V
