GT1K2P15D5
Goford Semiconductor
IXTY1R4N60P TRL
Part Number：
IXTY1R4N60P TRL
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 600V 1.4A TO252
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
- Power Dissipation (Max) 50W (Tc)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
- Vgs (Max) ±30V
- Supplier Device Package TO-252AA
- Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
- Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id 5.5V @ 25µA
