GT1K2P15D5
Goford Semiconductor
LND01K1-G
Part Number：
LND01K1-G
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET N-CH 9V 330MA SOT23-5
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Vgs(th) (Max) @ Id -
- Package / Case SC-74A, SOT-753
- Supplier Device Package SOT-23-5
- Power Dissipation (Max) 360mW (Ta)
- Operating Temperature -25°C ~ 125°C (TJ)
- FET Type N-Channel, Depletion Mode
- Drive Voltage (Max Rds On, Min Rds On) 0V
- Current - Continuous Drain (Id) @ 25°C 330mA (Tj)
- Drain to Source Voltage (Vdss) 9 V
- Rds On (Max) @ Id, Vgs 1.4Ohm @ 100mA, 0V
- Vgs (Max) +0.6V, -12V
- Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 5 V
