GT1K2P15D5
Goford Semiconductor
LSIC1MO120E0120
Part Number：
LSIC1MO120E0120
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse Inc.
Description：
SICFET N-CH 1200V 27A TO247-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Supplier Device Package TO-247AD
- Current - Continuous Drain (Id) @ 25°C 27A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 20 V
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 139W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +22V, -6V
- Rds On (Max) @ Id, Vgs 150mOhm @ 14A, 20V
- Vgs(th) (Max) @ Id 4V @ 7mA
- Input Capacitance (Ciss) (Max) @ Vds 1125 pF @ 800 V
