GT1K2P15D5
Goford Semiconductor
MCG53N06AHE3-TP
Part Number：
MCG53N06AHE3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
Interface
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Operating Temperature -55°C ~ 150°C
- Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case 8-VDFN Exposed Pad
- Current - Continuous Drain (Id) @ 25°C 53A
- Rds On (Max) @ Id, Vgs 8.2mOhm @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 50 V
- Supplier Device Package DFN3333
- Power Dissipation (Max) 45W
