GT1K2P15D5
Goford Semiconductor
MMIX1F180N25T
Part Number：
MMIX1F180N25T
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 250V 132A 24SMPD
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 250 V
- Vgs(th) (Max) @ Id 5V @ 8mA
- Power Dissipation (Max) 570W (Tc)
- Rds On (Max) @ Id, Vgs 13mOhm @ 90A, 10V
- Current - Continuous Drain (Id) @ 25°C 132A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 364 nC @ 10 V
- Supplier Device Package 24-SMPD
- Package / Case 24-PowerSMD, 21 Leads
- Input Capacitance (Ciss) (Max) @ Vds 23800 pF @ 25 V
