GT1K2P15D5
Goford Semiconductor
MSC025SMA120B4
Part Number：
MSC025SMA120B4
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
TRANS SJT N-CH 1200V 103A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 500W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Current - Continuous Drain (Id) @ 25°C 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247-4
- Vgs (Max) +23V, -10V
- Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
- Gate Charge (Qg) (Max) @ Vgs 232 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 1000 V
- Vgs(th) (Max) @ Id 2.8V @ 3mA
