GT1K2P15D5
Goford Semiconductor
NDB6030L
Part Number：
NDB6030L
Category：
Single FETs, MOSFETs
Manufacturer：
Fairchild Semiconductor
Description：
N-CHANNEL POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Operating Temperature -65°C ~ 175°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V
- Vgs (Max) ±16V
- Power Dissipation (Max) 75W (Tc)
- Current - Continuous Drain (Id) @ 25°C 52A (Tc)
- Supplier Device Package TO-263AB
- Rds On (Max) @ Id, Vgs 13.5mOhm @ 26A, 10V
