GT1K2P15D5
Goford Semiconductor
NP80N06MLG-S18-AY
Part Number：
NP80N06MLG-S18-AY
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas
Description：
NP80N06MLG-S18-AY - SWITCHINGN-C
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Package / Case TO-220-3
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 128 nC @ 10 V
- Operating Temperature 175°C
- Power Dissipation (Max) 1.8W (Ta), 115W (Tc)
- Rds On (Max) @ Id, Vgs 8.6mOhm @ 40A, 10V
- Supplier Device Package MP-25K
