GT1K2P15D5
Goford Semiconductor
NSF080120L3A0Q
Part Number：
NSF080120L3A0Q
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
SICFET N-CH 1200V 35A TO247-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-247-3
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 183W (Tc)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +22V, -10V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
- Supplier Device Package TO-247-3L
- Rds On (Max) @ Id, Vgs 120mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id 2.9V @ 2mA
- Input Capacitance (Ciss) (Max) @ Vds 1335 pF @ 800 V
