GT1K2P15D5
Goford Semiconductor
NTH4L013N120M3S
Part Number：
NTH4L013N120M3S
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
DISCRETE SIC M3S 1200V 13MOHM
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package TO-247-4
- Current - Continuous Drain (Id) @ 25°C 151A (Tc)
- Vgs (Max) +22V, -10V
- Rds On (Max) @ Id, Vgs 20mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id 4.4V @ 37mA
- Gate Charge (Qg) (Max) @ Vgs 254 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 5813 pF @ 800 V
- Power Dissipation (Max) 682W (Tc)
