GT1K2P15D5
Goford Semiconductor
NTMFS4C810NAT1G
Part Number：
NTMFS4C810NAT1G
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
TRENCH 6 30V NCH
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Supplier Device Package 5-DFN (5x6) (8-SOFL)
- Package / Case 8-PowerTDFN, 5 Leads
- Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 987 pF @ 15 V
- Power Dissipation (Max) 750mW (Ta), 23.6W (Tc)
- Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 46A (Tc)
- Rds On (Max) @ Id, Vgs 5.88mOhm @ 30A, 10V
