GT1K2P15D5
Goford Semiconductor
NTMTSC4D2N10GTXG
Part Number：
NTMTSC4D2N10GTXG
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
100V MVSOA IN DFNW8(PQFN8X8) PAC
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount, Wettable Flank
- Gate Charge (Qg) (Max) @ Vgs 159 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 450µA
- Supplier Device Package 8-TDFNW (8.3x8.4)
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 178A (Tc)
- Rds On (Max) @ Id, Vgs 4.2mOhm @ 88A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 10450 pF @ 50 V
- Power Dissipation (Max) 3.9W (Ta), 267W (Tc)
