GT1K2P15D5
Goford Semiconductor
NVBG015N065SC1
Part Number：
NVBG015N065SC1
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
SIC MOS D2PAK-7L 650V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) 500W (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package D2PAK-7
- Current - Continuous Drain (Id) @ 25°C 145A (Tc)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V
- Vgs(th) (Max) @ Id 4.3V @ 25mA
- Gate Charge (Qg) (Max) @ Vgs 283 nC @ 18 V
- Vgs (Max) +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds 4689 pF @ 325 V
