GT1K2P15D5
Goford Semiconductor
NVMFS4C306NWFT1G
Part Number：
NVMFS4C306NWFT1G
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
POWER MOSFET 30V, 116A, 3.4 M, S
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Vgs(th) (Max) @ Id 2.1V @ 250µA
- Package / Case 8-PowerTDFN, 5 Leads
- Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
- Mounting Type Surface Mount, Wettable Flank
- Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V
- Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Current - Continuous Drain (Id) @ 25°C 20.6A (Ta), 71A (Tc)
- Power Dissipation (Max) 3W (Ta), 36.5W (Tc)
