GT1K2P15D5
Goford Semiconductor
NVMYS4D6N06CTWG
Part Number：
NVMYS4D6N06CTWG
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
POWER MOSFET 60 V, 4.7 M, 92A, S
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 25 V
- Vgs(th) (Max) @ Id 4V @ 80µA
- Package / Case SOT-1023, 4-LFPAK
- Supplier Device Package LFPAK4 (5x6)
- Current - Continuous Drain (Id) @ 25°C 20.8A (Ta), 92A (Tc)
- Rds On (Max) @ Id, Vgs 4.7mOhm @ 25A, 10V
- Power Dissipation (Max) 4.1W (Ta), 79.5W (Tc)
