GT1K2P15D5
Goford Semiconductor
NVNJWS200N031LTAG
Part Number：
NVNJWS200N031LTAG
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
MOSFET - POWER, N-CHANNEL WITH E
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Vgs(th) (Max) @ Id 1.5V @ 250µA
- Drain to Source Voltage (Vdss) 30 V
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 3V, 4.5V
- Rds On (Max) @ Id, Vgs 200mOhm @ 1.5A, 4.5V
- Package / Case 3-XFDFN
- Mounting Type Surface Mount, Wettable Flank
- Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 89 pF @ 15 V
- Supplier Device Package 3-XDFNW (1x1)
- Current - Continuous Drain (Id) @ 25°C 2.2A (Ta), 3.3A (Tc)
- Power Dissipation (Max) 1.8W (Ta), 4.1W (Tc)
