GT1K2P15D5
Goford Semiconductor
P3M06060G7
Part Number：
P3M06060G7
Category：
Single FETs, MOSFETs
Manufacturer：
PN Junction Semiconductor
Description：
SICFET N-CH 650V 44A TO-263-7
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package D2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 159W
- Vgs (Max) +20V, -8V
- Current - Continuous Drain (Id) @ 25°C 44A
- Rds On (Max) @ Id, Vgs 79mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id 2.2V @ 20mA (Typ)
