GT1K2P15D5
Goford Semiconductor
PJD10N10_L2_00001
Part Number：
PJD10N10_L2_00001
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
100V N-CHANNEL MOSFET
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- FET Feature -
- Grade -
- Qualification -
- Part Status Not For New Designs
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Vgs(th) (Max) @ Id 3.5V @ 250µA
- Vgs (Max) ±25V
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Supplier Device Package TO-252AA
- Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 30 V
- Current - Continuous Drain (Id) @ 25°C 2.6A (Ta), 34.7A (Tc)
- Power Dissipation (Max) 2W (Ta), 34.7W (Tc)
