GT1K2P15D5
Goford Semiconductor
PJD11N06A_L2_00001
Part Number：
PJD11N06A_L2_00001
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
60V N-CHANNEL ENHANCEMENT MODE M
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Supplier Device Package TO-252AA
- Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
- Power Dissipation (Max) 2W (Ta), 25W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 15 V
- Current - Continuous Drain (Id) @ 25°C 3.7A (Ta), 11A (Tc)
- Rds On (Max) @ Id, Vgs 75mOhm @ 6A, 10V
