GT1K2P15D5
Goford Semiconductor
PJD55N04S-AU_L2_002A1
Part Number：
PJD55N04S-AU_L2_002A1
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
40V N-CHANNEL ENHANCEMENT MODE M
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 40 V
- Supplier Device Package TO-252AA
- Vgs(th) (Max) @ Id 2.3V @ 50µA
- Rds On (Max) @ Id, Vgs 5.3mOhm @ 20A, 10V
- Power Dissipation (Max) 3W (Ta), 71W (Tc)
- Current - Continuous Drain (Id) @ 25°C 17.7A (Ta), 87A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1328 pF @ 25 V
