GT1K2P15D5
Goford Semiconductor
PSMN1R4-40YSHX
Part Number：
PSMN1R4-40YSHX
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
NEXTPOWERS3 MOSFETS
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 40 V
- Power Dissipation (Max) 333W (Tc)
- Supplier Device Package LFPAK56, Power-SO8
- Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 240A (Tc)
- Rds On (Max) @ Id, Vgs 1.4mOhm @ 25A, 10V
- Package / Case SOT-1023, 4-LFPAK
- Vgs(th) (Max) @ Id 3.6V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 7523 pF @ 20 V
