GT1K2P15D5
Goford Semiconductor
R6003JND4TL1
Part Number：
R6003JND4TL1
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
600V 1.3A SOT-223-3, PRESTOMOS W
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C (TJ)
- Supplier Device Package SOT-223-3
- Drain to Source Voltage (Vdss) 600 V
- Vgs (Max) ±30V
- Package / Case TO-261-3
- Current - Continuous Drain (Id) @ 25°C 1.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 100 V
- Power Dissipation (Max) 7.8W (Tc)
- Rds On (Max) @ Id, Vgs 2.15Ohm @ 1.5A, 15V
- Vgs(th) (Max) @ Id 7V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 15 V
