GT1K2P15D5
Goford Semiconductor
R6022YNX3C16
Part Number：
R6022YNX3C16
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 600V 22A, TO-220AB, POWER MO
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Operating Temperature 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 22A (Tc)
- Vgs (Max) ±30V
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
- Power Dissipation (Max) 205W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
- Rds On (Max) @ Id, Vgs 165mOhm @ 6.5A, 12V
- Vgs(th) (Max) @ Id 6V @ 1.8mA
