GT1K2P15D5
Goford Semiconductor
RD3P01BATTL1
Part Number：
RD3P01BATTL1
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
PCH -100V -10A POWER MOSFET: RD3
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- FET Type P-Channel
- Operating Temperature 150°C (TJ)
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 50 V
- Supplier Device Package TO-252
- Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
- Rds On (Max) @ Id, Vgs 240mOhm @ 5A, 10V
- Power Dissipation (Max) 25W (Ta)
