GT1K2P15D5
Goford Semiconductor
RF1S4N100SM9A
Part Number：
RF1S4N100SM9A
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 1000V 4.3A TO263AB
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 150W (Tc)
- Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
- Drain to Source Voltage (Vdss) 1000 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
- Supplier Device Package TO-263AB
