GT1K2P15D5
Goford Semiconductor
RF1S640SM
Part Number：
RF1S640SM
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 200V 18A TO263AB
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 200 V
- Power Dissipation (Max) 125W (Tc)
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
- Supplier Device Package TO-263AB
- Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
