GT1K2P15D5
Goford Semiconductor
RF4L070BGTCR
Part Number：
RF4L070BGTCR
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 60V 7A, HUML2020L8, POWER MO
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Power Dissipation (Max) 2W (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 7A (Ta)
- Rds On (Max) @ Id, Vgs 27mOhm @ 7A, 10V
- Package / Case 8-PowerUDFN
- Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 10 V
- Supplier Device Package DFN2020-8S
- Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 30 V
