GT1K2P15D5
Goford Semiconductor
RFB18N10CS
Part Number：
RFB18N10CS
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 100V 18A TO220AB-5
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-5
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 100mOhm @ 9A, 10V
- Power Dissipation (Max) 79W (Tc)
- FET Feature Current Sensing
- Supplier Device Package TO-220AB-5
