GT1K2P15D5
Goford Semiconductor
RFD16N05LSM
Part Number：
RFD16N05LSM
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
N-CHANNEL POWER MOSFET
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 60W (Tc)
- Drain to Source Voltage (Vdss) 50 V
- Current - Continuous Drain (Id) @ 25°C 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
- Vgs (Max) ±10V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Supplier Device Package TO-252AA
- Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
- Vgs(th) (Max) @ Id 2V @ 250mA
