GT1K2P15D5
Goford Semiconductor
RFD3N08L
Part Number：
RFD3N08L
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
N-CHANNEL POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Vgs (Max) ±10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Power Dissipation (Max) 30W (Tc)
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Supplier Device Package IPAK
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
- Drain to Source Voltage (Vdss) 80 V
- Rds On (Max) @ Id, Vgs 800mOhm @ 1.5A, 5V
