GT1K2P15D5
Goford Semiconductor
RJ1P10BBHTL1
Part Number：
RJ1P10BBHTL1
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
NCH 100V 105A, TO-263AB, POWER M
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature 150°C (TJ)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Current - Continuous Drain (Id) @ 25°C 105A (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
- Supplier Device Package TO-263AB
- Rds On (Max) @ Id, Vgs 3mOhm @ 90A, 10V
- Power Dissipation (Max) 189W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 8600 pF @ 50 V
