GT1K2P15D5
Goford Semiconductor
RQ3E100MNTB1
Part Number：
RQ3E100MNTB1
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
MOSFET N-CH 30V 10A HSMT8
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Part Status Not For New Designs
- Operating Temperature 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Power Dissipation (Max) 2W (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Package / Case 8-PowerVDFN
- Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 15 V
- Supplier Device Package 8-HSMT (3.2x3)
- Rds On (Max) @ Id, Vgs 12.3mOhm @ 10A, 10V
- Gate Charge (Qg) (Max) @ Vgs 9.9 nC @ 10 V
