GT1K2P15D5
Goford Semiconductor
RX3P12BATC16
Part Number：
RX3P12BATC16
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
PCH -100V -120A POWER MOSFET: RX
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- FET Type P-Channel
- Operating Temperature 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Power Dissipation (Max) 201W (Tc)
- Rds On (Max) @ Id, Vgs 12.3mOhm @ 60A, 10V
- Gate Charge (Qg) (Max) @ Vgs 385 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 16600 pF @ 50 V
