GT1K2P15D5
Goford Semiconductor
S2M0080120K
Part Number：
S2M0080120K
Category：
Single FETs, MOSFETs
Manufacturer：
SMC Diode Solutions
Description：
MOSFET SILICON CARBIDE SIC 1200V
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 41A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs(th) (Max) @ Id 4V @ 10mA
- Power Dissipation (Max) 231W (Tc)
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Supplier Device Package TO-247-4
- Gate Charge (Qg) (Max) @ Vgs 54 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1324 pF @ 1000 V
