GT1K2P15D5
Goford Semiconductor
S3M0016120N
Part Number：
S3M0016120N
Category：
Single FETs, MOSFETs
Manufacturer：
SMC Diode Solutions
Description：
MOSFET SILICON CARBIDE SIC 1200V
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Chassis Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case SOT-227-4, miniBLOC
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Supplier Device Package SOT-227
- Drain to Source Voltage (Vdss) 1200 V
- Vgs(th) (Max) @ Id 4V @ 30mA
- Technology SiC (Silicon Carbide Junction Transistor)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -8V
- Rds On (Max) @ Id, Vgs 23mOhm @ 75A, 18V
- Gate Charge (Qg) (Max) @ Vgs 287 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 5251 pF @ 1000 V
- Power Dissipation (Max) 732W (Tc)
