GT1K2P15D5
Goford Semiconductor
SCT025H120G3AG
Part Number：
SCT025H120G3AG
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
AUTOMOTIVE-GRADE SILICON CARBIDE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 375W (Tc)
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package H2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 800 V
- Vgs(th) (Max) @ Id 4.2V @ 5mA
- Rds On (Max) @ Id, Vgs 37mOhm @ 25A, 18V
- Gate Charge (Qg) (Max) @ Vgs 73 nC @ 18 V
