GT1K2P15D5
Goford Semiconductor
SCT055TO65G3
Part Number：
SCT055TO65G3
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SILICON CARBIDE POWER MOSFET 650
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Operating Temperature -65°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 234W (Tc)
- Package / Case 8-PowerSFN
- Supplier Device Package TOLL (HV)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
- Vgs(th) (Max) @ Id 4.2V @ 1mA
- Vgs (Max) +18V, -5V
- Rds On (Max) @ Id, Vgs 72mOhm @ 15A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 687 pF @ 400 V
