GT1K2P15D5
Goford Semiconductor
SCT070H120G3-7
Part Number：
SCT070H120G3-7
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SILICON CARBIDE POWER MOSFET 120
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 223W (Tc)
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package H2PAK-7
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs(th) (Max) @ Id 4.2V @ 1mA
- Vgs (Max) +18V, -5V
- Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
- Gate Charge (Qg) (Max) @ Vgs 37.0
- Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs 18.0
- Input Capacitance (Ciss) (Max) @ Vds 900.0
- Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds 850.0
