GT1K2P15D5
Goford Semiconductor
SCT070W120G3-4
Part Number：
SCT070W120G3-4
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SICFET N-CH 1200V 30A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 200°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 236W (Tc)
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
- Vgs(th) (Max) @ Id 4.2V @ 1mA
- Vgs (Max) +18V, -5V
- Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
- Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 850 V
