GT1K2P15D5
Goford Semiconductor
SCT3017ALGC11
Part Number：
SCT3017ALGC11
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
650V, 118A, THD, TRENCH-STRUCTUR
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-247-3
- Drain to Source Voltage (Vdss) 650 V
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Supplier Device Package TO-247N
- Vgs (Max) +22V, -4V
- Power Dissipation (Max) 427W
- Current - Continuous Drain (Id) @ 25°C 118A (Tc)
- Rds On (Max) @ Id, Vgs 22.1mOhm @ 47A, 18V
- Vgs(th) (Max) @ Id 5.6V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs 172 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2884 pF @ 500 V
