GT1K2P15D5
Goford Semiconductor
SGT120R65AL
Part Number：
SGT120R65AL
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
650 V, 75 MOHM TYP., 15 A, E-MOD
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 15A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 192W (Tc)
- Package / Case 8-PowerVDFN
- Technology GaNFET (Gallium Nitride)
- Supplier Device Package PowerFlat™ (5x6) HV
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Rds On (Max) @ Id, Vgs 120mOhm @ 5A, 6V
- Vgs(th) (Max) @ Id 2.6V @ 12mA
- Gate Charge (Qg) (Max) @ Vgs 3 nC @ 6 V
- Vgs (Max) +6V, -10V
- Input Capacitance (Ciss) (Max) @ Vds 125 pF @ 400 V
