GT1K2P15D5
Goford Semiconductor
SI2301BDS-T1-BE3
Part Number：
SI2301BDS-T1-BE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 2.5-V (G-S) MOSFET
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Power Dissipation (Max) 700mW (Ta)
- Drain to Source Voltage (Vdss) 20 V
- Supplier Device Package SOT-23-3 (TO-236)
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
- Vgs(th) (Max) @ Id 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
- Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 375 pF @ 6 V
