GT1K2P15D5
Goford Semiconductor
SI2365EDS-T1-BE3
Part Number：
SI2365EDS-T1-BE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay Siliconix
Description：
P-CHANNEL 20-V (D-S) MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-236-3, SC-59, SOT-23-3
- FET Type P-Channel
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Supplier Device Package SOT-23-3 (TO-236)
- Vgs (Max) ±8V
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 36 nC @ 8 V
- Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V
- Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 5.9A (Tc)
